APTGT100H170G APTGT100H170G C rev 2 october, 2012 www.microsemi.com 1-6 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1700 v t c = 25c 150 i c continuous collector current t c = 80c 100 i cm pulsed collector current t c = 25c 200 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 560 w rbsoa reverse bias safe operating area t j = 125c 200a @ 1600v these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com g4 0/vbus e3 q3 g3 out2 vbus e1 q1 g1 e4 q4 out1 e2 q2 g2 v ces = 1700v i c = 100a @ tc = 80c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt3 technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant full - bridge trench + field stop igbt3 power module downloaded from: http:///
APTGT100H170G APTGT100H170G C rev 2 october, 2012 www.microsemi.com 2-6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1700v 350 a t j = 25c 2.0 2.4 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 100a t j = 125c 2.4 v v ge(th) gate threshold voltage v ge = v ce , i c = 2ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 500 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 9 c oes output capacitance 0.36 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.3 nf t d(on) turn-on delay time 370 t r rise time 40 t d(off) turn-off delay time 650 t f fall time inductive switching (25c) v ge = 15v v bus = 900v i c = 100a r g = 4.7 ? 180 ns t d(on) turn-on delay time 400 t r rise time 50 t d(off) turn-off delay time 800 t f fall time inductive switching (125c) v ge = 15v v bus = 900v i c = 100a r g = 4.7 ? 300 ns e on turn-on switching energy t j = 125c 32 e off turn-off switching energy v ge = 15v v bus = 900v i c = 100a r g = 4.7 ? t j = 125c 31 mj diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1700 v t j = 25c 350 i rm maximum reverse leakage current v r =1700v t j = 125c 600 a i f dc forward current tc = 80c 100 a t j = 25c 1.8 2.2 v f diode forward voltage i f = 100a t j = 125c 1.9 v t j = 25c 385 t rr reverse recovery time t j = 125c 490 ns t j = 25c 28 q rr reverse recovery charge t j = 125c 46 c t j = 25c 12 e r reverse recovery energy i f = 100a v r = 900v di/dt =1600a/s t j = 125c 24 mj downloaded from: http:///
APTGT100H170G APTGT100H170G C rev 2 october, 2012 www.microsemi.com 3-6 thermal and package characteristics symbol characteristic min typ max unit igbt 0.22 r thjc junction to case thermal resistance diode 0.39 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 300 g sp6 package outline (dimensions in mm) see application note apt0601 - mounting instructions for sp6 power modules on www.microsemi.com downloaded from: http:///
APTGT100H170G APTGT100H170G C rev 2 october, 2012 www.microsemi.com 4-6 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 25 50 75 100 125 150 175 200 00.511.522.533.54 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =20v v ge =9v 0 40 80 120 160 200 012345 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 25 50 75 100 125 150 175 200 5 6 7 8 9 10 11 12 13 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 20 40 60 80 100 0 25 50 75 100 125 150 175 200 i c (a) e (mj) v ce = 900v v ge = 15v r g = 4.7 ? t j = 125c eon eoff er 0 12.5 25 37.5 50 62.5 75 87.5 100 0 5 10 15 20 25 30 35 40 gate resistance (ohms) e (mj) v ce = 900v v ge =15v i c = 100a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 50 100 150 200 250 0 400 800 1200 1600 2000 v ce (v) i c (a) v ge =15v t j =125c r g =4.7 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt downloaded from: http:///
APTGT100H170G APTGT100H170G C rev 2 october, 2012 www.microsemi.com 5-6 forward characteristic of diode t j =25c t j =125c t j =125c 0 25 50 75 100 125 150 175 200 00.511.522.53 v f (v) i f (a) hard switching zcs zvs 0 5 10 15 20 25 0 20 40 60 80 100 120 140 i c (a) fmax, operating frequency (khz) v ce =900v d=50% r g =4.7 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode downloaded from: http:///
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